Scia Mill 300 is suitable for ion beam etching of various substrate materials with diameters up to 300 mm. This system is compatible with active gases and can perform reactive etching processes to improve etching selectivity and etching rate. It can also be equipped with different endpoint detection devices to accurately control the process. The Scia Mill 300 adopts a flexible modular design, which can be used for both large-scale production of box loading and small-scale production of single substrate loading.
-
Noun explanationIon beam etching IBE/IBM: using inert gas collimated ion beam for surface structure or material removalReactive Ion Beam Etching RIBE: Introducing reactive gas into an ion beam source for surface reactive etchingChemical assisted ion beam etching CAIBE: using a reaction gas independent of the ion beam to chemically react the surface to assist in etching
-
General attributes
-Can perform ion beam etching (IBE, IBM), reactive ion beam etching (RIBE), and chemically assisted ion beam etching (CAIBE)
-Etching angle adjustment: The sample stage can rotate and tilt adjustable
-Even without using a correction baffle, excellent uniformity can be achieved
-Reactive gases can be used to increase the etching rate and control the etching selectivity ratio
-Control the process through SIMS (Secondary Ion Mass Spectrometry) or optical cut-off point detection technology
-It can etch photoresist wafers and has a good sample cooling configuration
-Fully automated vehicle operations, including SECS/GEM communication, can be performed in different combination layouts.
-Key applications:
Manufacturing of surface relief grating SRG for AR and MR devices
Magnetic multilayer film for tunnel magnetoresistance (TMR) sensors
Preparation of ultra-thin lithium tantalate for infrared sensors
Reverse engineering of integrated circuit chip devices
-
Configurable options
-Single Chip Load Lock (optional); Combination layout can accommodate up to 3 work chambers and wafer carriers
-Optical cut-off point detector OES or secondary ion mass spectrometry cut-off point detector SIMS
