Scia Mill 200 is suitable for microstructure etching on complex multilayer films of various materials, with a maximum sample size of up to 200mm in diameter. The system is compatible with active gases and can perform reactive etching processes to improve etching selectivity and rate. The Scia Mill 200 adopts a flexible modular design, which allows for single sample versions suitable for research and development, as well as modular layouts up to 3 work chambers and 2 wafer carrier load locks, suitable for mass production.
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General attributesEtching of all sample areas using a circular ion source in an inert or reactive gas environmentCan perform ion beam etching (IBE, IBM), reactive ion beam etching (RIBE), and chemically assisted ion beam etching (CAIBE)Etching angle adjustment: The sample stage can rotate and tilt adjustableExcellent uniformity can be achieved without the need to modify the baffleBy using reactive gases, the etching rate can be increased and the etching selectivity can be controlledControl the process through SIMS (Secondary Ion Mass Spectrometry) or optical cut-off point detection technologyCan be equipped with wafer carriers to accommodate substrates of different sizesIt can etch photoresist wafers and has a good sample cooling configuration
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configuration option
-Single chip Load Lock (optional), OES or SIMS cut-off point detector (optional)
-Single Chip Load Lock (optional);
-The modular layout can accommodate up to 3 work chambers and wafer carriers;
-OES or SIMS cut-off point detector (optional)
